Cubic metal oxide thin film epitaxially grown on silicon
US5270298A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 4, 1992 |
| Grant date | Dec 14, 1993 |
| Priority date | — |
| Expiry date | Aug 4, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming crystalline metal oxide thin films on silicon and the resultant structure. A crystalline buffer layer (10) of yttria-stabilized zirconia is deposited on a silicon substrate (12). A thin template layer (10) of an anisotropic perovskite such as bismuth titanate or yttria barium copper oxide is deposited on the template layer under conditions favoring c-axis oriented growth. A nominally cubic metal-oxide layer (16) is deposited on the template layer which facilitates its singly crystalline growth. The metal oxide, often a nominally cubic perovskite, may be a conductive electrode, a ferroelectric, a non-hysteretic dielectric, a piezoelectric, or other class of material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.