High power high frequency metal-semiconductor field-effect transistor formed in silicon carbide
US5270554A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 14, 1991 |
| Grant date | Dec 14, 1993 |
| Priority date | — |
| Expiry date | Jun 14, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/87
Abstract
A high power, high frequency, metal-semiconductor field-effect transistor comprises a bulk single crystal silicon carbide substrate, an optional first epitaxial layer of p-type conductivity silicon carbide formed upon the substrate, and a second epitaxial layer of n-type conductivity silicon carbide formed upon the first epitaxial layer. The second epitaxial layer has two separate well regions therein that are respectively defined by higher carrier concentrations of n-type dopant ions than are present in the remainder of the second epitaxial layer. Ohmic contacts are positioned upon the wells for respectively defining one of the well regions as the source and the other as the drain. A Schottky metal contact is positioned upon a portion of the second epitaxial layer that is between the ohmic contacts and thereby between the source and drain for forming an active channel in the second epitaxial layer when a bias is applied to the Schottky contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.