Plasma processing apparatus
US5271788A · kind A · utility
31Cited by
10References
19Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jul 23, 1992 |
| Grant date | Dec 21, 1993 |
| Priority date | — |
| Expiry date | Jul 23, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3266
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetron plasma etching apparatus comprises a suscepter serving as an electrode on which a silicon wafer is mounted. A carbon ring having an outer diameter larger than the diameter of the wafer and an electrical resistance lower than that of the wafer, is arranged around the suscepter. The carbon ring is electrically connected to the suscepter. The carbon ring improves uniformity of etching of the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.