Patent · US Expired

Electrically programmable antifuse and fabrication processes

US5272101A · kind A · utility

81Cited by
9References
7Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 9, 1991
Grant dateDec 21, 1993
Priority date—
Expiry dateAug 9, 2011

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/3011
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A process for fabricating a metal-to-metal antifuse in a process sequence for forming a double layer metal interconnect structure includes the steps of forming and defining a first metal interconnect layer, forming and planarizing an inter-metal dielectric layer, forming an antifuse cell opening in the inter-metal dielectric layer, forming and defining an antifuse layer, forming metal-to-metal via holes in the inter-metal dielectric layer, and forming and defining a second metal interconnect layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.