Method for fabricating visible light laser diode
US5272109A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 31, 1992 |
| Grant date | Dec 21, 1993 |
| Priority date | — |
| Expiry date | Mar 31, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32325
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for fabricating a visible light laser diode includes growing a double heterojunction structure of AlGaInP/GaInP/AlGaInP on a GaAs substrate, forming a stripe-shaped ridge in the double heterojunction structure using a dielectric film as an etching mask, selectively growing n type GaAs by MOCVD using the dielectric film as a growth mask to form a GaAs current blocking layer burying the ridge, removing the dielectric film and growing a GaAs contact layer on the current blocking layer and the ridge. The step of selectively growing the GaAs current blocking layer includes growing a first GaAs layer on the double heterojunction structure at both sides of the ridge and on the side walls of the ridge using triethylgallium (TEG) as a Ga source and growing a second GaAs layer on the first GaAs layer using trimethylgallium (TMG) as a Ga source. The side walls of the ridge are covered by the first GaAs layer and are not exposed to a high temperature in an AsH.sub.3 ambient, thereby reducing damage to the double heterojunction structure. In addition, since the second GaAs layer is grown using TMG as the Ga source, cavities are not produced in the GaAs layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.