Low-temperature low-stress blanket tungsten film
US5272112A · kind A · utility
15Cited by
3References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 9, 1992 |
| Grant date | Dec 21, 1993 |
| Priority date | — |
| Expiry date | Nov 9, 2012 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/14
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A chemical vapor deposition process performed at a temperature below 440 degrees C. for blanket tungsten deposition as a step in manufacturing integrated circuits deposits an integrated film suitable for voidless fill of vias as small as 0.5 microns in width and with aspect ratios of more than 2, while providing resistivity well below 100 micro-ohms per square, film stress generally in the mid 7E+09 dynes per square centimeter and below, and reflectivity of more than 40%, measured relative to silicon at 436 nanometer wavelength for 1 micron film thickness, while avoiding the use of nitrogen in the process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.