Semiconductor laser device
US5272712A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 31, 1992 |
| Grant date | Dec 21, 1993 |
| Priority date | — |
| Expiry date | Jul 31, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3403
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device includes a first conductivity type cladding layer, an active layer, and a second conductivity type cladding layer disposed on a first conductivity type substrate. A multiquantum barrier structure is disposed between the active layer and one of the cladding layers. The active layer includes a layer with a lattice constant different from the lattice constant of the first conductivity type substrate by at least 0.1 percent so that a strain is applied to the active layer. The threshold current is significantly reduced, resulting in a high power semiconductor laser capable of operating at a high temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.