Electrophotographic light-receiving member having surface region with high ratio of Si bonded to C
US5273851A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 23, 1991 |
| Grant date | Dec 28, 1993 |
| Priority date | — |
| Expiry date | Oct 23, 2011 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G5/08221
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An electrophotographic light-receiving member comprises a substrate, a photoconductive layer formed on the substrate and composed of a non-single crystal material containing a base component silicon atoms and a surface layer (surface-side region) made of a non-single crystal material containing silicon, carbon and hydrogen atoms, in which the ratio of silicon atoms having at least one bond to a carbon atom in the surface layer is at least 50% of the total number of silicon atoms. The electrophotographic light-receiving member has good initial electrophotographic properties and particularly good durability under a high-humidity environment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.