Method of growing epitaxial layers of N-doped II-VI semiconductor compounds
US5273931A · kind A · utility
5Cited by
7References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 4, 1992 |
| Grant date | Dec 28, 1993 |
| Priority date | — |
| Expiry date | Jun 4, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/925
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Epitaxial layers of N-doped II-VI semiconductor compounds are grown on GaAs substrates by MOCVD using FME. Separating the growth and doping by alternating introduction of (1) the semiconductor cation and anion and (2) the cation and the dopant increases the level of doping, the level of activation, and the crystal quality.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.