Vapor phase growth method of forming film in process of manufacturing semiconductor device
US5273933A · kind A · utility
29Cited by
1References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 23, 1992 |
| Grant date | Dec 28, 1993 |
| Priority date | — |
| Expiry date | Jul 23, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/925
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a process of manufacturing a short-wavelength-light emitting element, n- and p-type GaInAlN films are formed on a substrate made of SiC, using an MOCVD method. (CH.sub.3).sub.3 SiN.sub.3 is used as raw material for nitrogen. The films are grown at a relatively low temperature and the amount of nitrogen doped in the films is increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.