Method for producing a doped region in a substrate

US5273934A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Karl Ehinger · Karlsruhe, DE
• Michael Bianco · Malibu, US
• Helmut Klose · Munich, DE

Key dates

• Filing date: May 11, 1992
• Grant date: Dec 28, 1993
• Expiry date: May 11, 2012

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/923
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A doped region (14) is produced in a substrate (11) of silicon by diffusion of dopant from a doped glass layer (13) that is arranged on an intermediate layer (12) situated on the substrate (11) . The dopant concentration in the doped region (14) is thereby limited by the intermediate layer (12). The doped glass layer (13) is particularly produced by chemical vapor deposition of (B(OSi(CH.sub.3).sub.3).sub.3).