Radial epitaxial reactor for multiple wafer growth

US5275686A · kind A · utility

Assignee

• The Regents of the University of New Mexico · US

Inventors

• Christian F. Schaus · Albuquerque, US
• Eric A. Armour · Pennington, US
• Kang Zheng · Bethesda, US
• Shang-Zhu Sun · Albuquerque, US
• David P. Kopchik · Albuquerque, US

Key dates

• Filing date: Sep 25, 1991
• Grant date: Jan 4, 1994
• Expiry date: Sep 25, 2011

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C30B25/14
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

An improved gas distribution scheme for a multi-wafer radially injected convergent horizontal epitaxial reactor which includes two outer distribution rings, an outer injection ring, an annular susceptor, and a central exhaust tube. The converging path of the gas stream from the outer injection ring into the central exhaust tube compensates for depletion of the reactant gases along the substrate. The injector ring has a large number of evenly spaced diffuser orifices that allow the gas to expand into the growth chamber in a laminar flow pattern. The design is compact, includes the possibility of water cooling of the quartz during deposition, and allows for a resistive bakeout furnace which can be used to etch and clean the reaction chamber between runs.