Process to manufacture crown stacked capacitor structures with HSG-rugged polysilicon on all sides of the storage node

US5278091A · kind A · utility

Assignee

• Micron Semiconductor, Inc. · US

Inventors

• Pierre C. Fazan · Boise, US
• Viju K. Mathews · Boise, US

Key dates

• Filing date: May 4, 1993
• Grant date: Jan 11, 1994
• Expiry date: May 4, 2013

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/964

Abstract

The present invention develops a container capacitor by forming a first insulative layer over conductive word lines; forming an opening between neighboring conductive word lines; forming a conductive plug between neighboring parallel conductive word lines; forming a planarized blanketing second insulating layer over the first insulative layer and the conductive plug; forming an opening into the second insulating layer, the opening thereby forming a container shape; forming a conductive spacer adjacent the wall of the container form, the conductive spacer having inner and outer surfaces; removing the second insulating layer, thereby exposing the outer surface of the conductive spacer; forming a layer of hemispherical grained conductive material superjacent the inner and outer surfaces of the conductive spacer; forming insulating spacers adjacent the inner and outer surfaces of the hemispherical grained conductive material; patterning the hemispherical grained conductive material to form a separate conductive container structure serving as a first capacitor cell plate; removing the insulating spacers; forming a capacitor cell dielectric layer adjacent and coextensive the conductive c…