Micron Semiconductor, Inc.
156Patents
0Active
156Granted
43Portfolio score
Filing activity: Apr 15, 1992 → Oct 5, 2000
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5302233A | Method for shaping features of a semiconductor structure using chemical mechanical planarization (CMP) | Performing Operations; Transporting | 384 | Expired |
| US5323060A | Multichip module having a stacked chip arrangement | Electricity | 364 | Expired |
| US5384284A | Method to form a low resistant bond pad interconnect | Emerging Cross-Sectional Technologies | 329 | Expired |
| US5416048A | Method to slope conductor profile prior to dielectric deposition to improve dielectric step-coverage | Electricity | 306 | Expired |
| US5335138A | High dielectric constant capacitor and method of manufacture | Electricity | 262 | Expired |
| US5338700A | Method of forming a bit line over capacitor array of memory cells | Electricity | 246 | Expired |
| US5326428A | Method for testing semiconductor circuitry for operability and method of forming apparatus for testing semiconductor circuitry for operability | Emerging Cross-Sectional Technologies | 239 | Expired |
| US5291061A | Multi-chip stacked devices | Electricity | 217 | Expired |
| US5392189A | Capacitor compatible with high dielectric constant materials having two independent insulative layers and the method for forming same | Electricity | 217 | Expired |
| US5340765A | Method for forming enhanced capacitance stacked capacitor structures using hemi-spherical grain polysilicon | Emerging Cross-Sectional Technologies | 207 | Expired |
| US5367253A | Clamped carrier for testing of semiconductor dies | Electricity | 189 | Expired |
| US5340763A | Multi-pin stacked capacitor utilizing micro villus patterning in a container cell and method to fabricate same | Electricity | 182 | Expired |
| US5418180A | Process for fabricating storage capacitor structures using CVD tin on hemispherical grain silicon | Electricity | 179 | Expired |
| US5381302A | Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same | Electricity | 178 | Expired |
| US5341016A | Low resistance device element and interconnection structure | Emerging Cross-Sectional Technologies | 160 | Expired |
| US5350645A | Polymer-lithium batteries and improved methods for manufacturing batteries | Emerging Cross-Sectional Technologies | 159 | Expired |
| US5405791A | Process for fabricating ULSI CMOS circuits using a single polysilicon gate layer and disposable spacers | Electricity | 156 | Expired |
| US5300830A | Programmable logic device macrocell with an exclusive feedback and exclusive external input lines for registered and combinatorial modes using a dedicated product term for control | Electricity | 148 | Expired |
| US5369622A | Memory with isolated digit lines | Physics | 147 | Expired |
| US5278091A | Process to manufacture crown stacked capacitor structures with HSG-rugged polysilicon on all sides of the storage node | Emerging Cross-Sectional Technologies | 146 | Expired |
| US5484314A | Micro-pillar fabrication utilizing a stereolithographic printing process | Electricity | 141 | Expired |
| US5301143A | Method for identifying a semiconductor die using an IC with programmable links | Electricity | 126 | Expired |
| US5326652A | Battery package and method using flexible polymer films having a deposited layer of an inorganic material | Emerging Cross-Sectional Technologies | 126 | Expired |
| US5407534A | Method to prepare hemi-spherical grain (HSG) silicon using a fluorine based gas mixture and high vacuum anneal | Emerging Cross-Sectional Technologies | 121 | Expired |
| US5246881A | Low-pressure chemical vapor deposition process for depositing high-density, highly-conformal, titanium nitride films of low bulk resistivity | Chemistry; Metallurgy | 117 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.