Method for forming grain boundary junction devices using high T.sub.c superconductors

US5278140A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Praveen Chaudhari · Briarcliff Manor, US
• Cheng Chi · Jersey City, US
• Duane B. Dimos · Albuquerque, US
• Jochen Mannhart · Eppelheim, DE
• Chang C. Tsuei · Chappaqua, US

Key dates

• Filing date: Sep 16, 1992
• Grant date: Jan 11, 1994
• Expiry date: Sep 16, 2012

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S505/728

Abstract

A method is disclosed for fabricating grain boundary junction devices, which comprises preparing a crystalline substrate containing at least one grain boundary therein, epitaxially depositing a high Tc superconducting layer on the substrate, patterning the superconducting layer to leave at least two superconducting regions on either side of the grain boundary and making electrical contacts to the superconducting regions so that bias currents can be produced across the grain boundary.