Method for producing semiconductor wafer
US5279077A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 16, 1992 |
| Grant date | Jan 18, 1994 |
| Priority date | — |
| Expiry date | Nov 16, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24777
- WIPO fieldOther special machines
- WIPO sectorMechanical engineering
Abstract
In a method for forming a semiconductor wafer with an orientation flat along a cleavage plane, a groove or hole is formed in the substrate on a line along which the substrate is cleaved to form an orientation flat and the substrate is treated to produce a mirrorlike surface. Then, the substrate having the mirrorlike surface is cleaved from the groove or hole to form the orientation flat. Accordingly, edges of the cleavage plane are not rounded due to the surface treatment. In addition, the substrate is easily cleaved along the cleavage plane from the groove or the hole. As a result, a semiconductor wafer having a sharp cleavage plane as an orientation flat is produced with improved yield, and alignment is performed with high precision in a subsequent process, such as photolithography.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.