Norio Hayafuji
26Patents
12h-index
31Co-inventors
73Inventor score
Filing activity: Oct 31, 1990 → Sep 25, 1997
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5796127A | High electron mobility transistor | Electricity | 207 | Expired |
| US5760426A | Heteroepitaxial semiconductor device including silicon substrate, GaAs layer and GaN layer #13 | Electricity | 115 | Expired |
| US5100480A | Solar cell and method for manufacturing the same | Emerging Cross-Sectional Technologies | 64 | Expired |
| US5764673A | Semiconductor light emitting device | Electricity | 38 | Expired |
| US5701321A | Semiconductor laser producing short wavelength light | Electricity | 26 | Expired |
| US6358316B1 | Method for producing semiconductor device, method for producing semiconductor laser device, and method for producing quantum wire structure | Electricity | 25 | Expired |
| US5811843A | Field effect transistor | Electricity | 18 | Expired |
| US5439723A | Substrate for producing semiconductor wafer | Emerging Cross-Sectional Technologies | 17 | Expired |
| US5316967A | Method for producing semiconductor device | Electricity | 17 | Expired |
| US5426658A | Semiconductor laser including ridge confining buffer layer | Electricity | 16 | Expired |
| US5728215A | Method for forming a film by selective area MOCVD growth | Chemistry; Metallurgy | 15 | Expired |
| US5677922A | Semiconductor laser with crystalline window layer | Electricity | 13 | Expired |
| US5387544A | Method of making a semiconductor device including carbon as a dopant | Emerging Cross-Sectional Technologies | 12 | Expired |
| US5729030A | Semiconductor device | Electricity | 10 | Expired |
| US5602414A | Infrared detector having active regions and isolating regions formed of CdHgTe | Electricity | 10 | Expired |
| US5420066A | Method for producing semiconductor laser device using etch stop layer | Electricity | 8 | Expired |
| US5682045A | Method of fabricating semiconductor device and semiconductor device fabricated thereby | Electricity | 6 | Expired |
| US5279077A | Method for producing semiconductor wafer | Emerging Cross-Sectional Technologies | 6 | Expired |
| US5805628A | Semiconductor laser | Electricity | 4 | Expired |
| US6037242A | Method of making hetero-structure | Electricity | 3 | Expired |
| US5357535A | Semiconductor laser including an aluminum-rich AlGaAs etch stopping layer | Electricity | 3 | Expired |
| US5573960A | Method of manufacturing semiconductor layers by bonding without defects created by bonding | Emerging Cross-Sectional Technologies | 3 | Expired |
| US5394417A | Semiconductor laser producing visible light | Electricity | 2 | Expired |
| US5874753A | Field effect transistor | Electricity | 2 | Expired |
| US5467731A | Method of producing a semiconductor structure including a recrystallized film | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.