Projection electron lithographic procedure
US5279925A · kind A · utility
26Cited by
3References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 16, 1992 |
| Grant date | Jan 18, 1994 |
| Priority date | — |
| Expiry date | Dec 16, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/167
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
It has been found that for a SCALPEL lithographic system thermal effects dictate that the acceleration voltage for the exposing electrons be maintained within a specific range. This range depends on a variety of factors but is generally in the 50 to 150 KeV region. Additionally, thermal considerations also dictate the method of scanning the mask to print an entire wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.