Atomic layer epitaxy (ALE) apparatus for growing thin films of elemental semiconductors
US5281274A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Feb 4, 1993 |
| Grant date | Jan 25, 1994 |
| Priority date | — |
| Expiry date | Feb 4, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/974
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus for and a method of growing thin films of the elemental semiductors (group IVB), i.e., silicon, germanium, tin, lead, and, especially diamond, using modified atomic layer epitaxial (ALE) growth techniques are disclosed. In addition, stoichiometric and non-stoichiometric compounds of the group IVB elements are also grown by a variation of the method according to the present invention. The ALE growth of diamond thin films is carried-out, inter alia, by exposing a plurality of diamond or like substrates alternately to a halocarbon reactant gas, e.g., carbon tetrafluoride (CF.sub.4), and a hydrocarbon reactant gas, e.g., methane (CH.sub.4), at substrate temperatures between 300 and 650 Celsius. A stepping motor device portion of the apparatus is controlled by a programmable controller portion such that the surfaces of the plurality of substrates are given exposures of at least 10.sup.15 molecules/cm.sup.2 of each of the reactant gases. The chemical reaction time to complete the growth of an individual atom layer is approximately 25.times.10.sup.-6 second.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.