Method for manufacturing a crystal with a lattice parameter gradient
US5281299A · kind A · utility
6Cited by
4References
6Claims
0Family size
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Inventors
Key dates
| Filing date | Jul 2, 1992 |
| Grant date | Jan 25, 1994 |
| Priority date | — |
| Expiry date | Jul 2, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/936
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for manufacturing a crystal comprising at least two elements wherein the proportion of at least one of the elements varies in the direction of the thickness. A CVD process is used. The proportion of the gas components from which is formed the deposition is varied with time. The invention applies to the manufacturing of Si.sub.x Ge.sub.1-x crystals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.