Roland Madar
9Patents
6h-index
33Co-inventors
59Inventor score
Filing activity: Jun 19, 1985 → May 15, 2003
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5916634A | Chemical vapor deposition of W-Si-N and W-B-N | Chemistry; Metallurgy | 55 | Expired |
| US7208392B1 | Creation of an electrically conducting bonding between two semi-conductor elements | Electricity | 22 | Expired |
| US4663066A | Magnetic rare earth/iron/boron and rare earth/cobalt/boron hydrides, the process for their manufacture of the corresponding pulverulent dehydrogenated products | Emerging Cross-Sectional Technologies | 20 | Expired |
| US5945162A | Method and device for introducing precursors into chamber for chemical vapor deposition | Chemistry; Metallurgy | 16 | Expired |
| US6238739A | Non-plasma CVD method and apparatus of forming Ti1-xA1xN coatings | Chemistry; Metallurgy | 16 | Expired |
| US5997949A | Synthesis of W-Si-N films by chemical vapor deposition using WF.sub.6, SiH.sub.4 and NH.sub.3 | Chemistry; Metallurgy | 11 | Expired |
| US5281299A | Method for manufacturing a crystal with a lattice parameter gradient | Emerging Cross-Sectional Technologies | 6 | Expired |
| US4871691A | Selective deposition process of a refractory metal silicide onto silicon areas | Emerging Cross-Sectional Technologies | 6 | Expired |
| US7655091B2 | Formation of single-crystal silicon carbide | Emerging Cross-Sectional Technologies | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.