Structure and method of making Alpha-Ta in thin films
US5281485A · kind A · utility
144Cited by
8References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 15, 1993 |
| Grant date | Jan 25, 1994 |
| Priority date | — |
| Expiry date | Jan 15, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31678
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates generally to a structure and a method of making Alpha-Ta films, and more particularly, to a structure and a method of making Alpha-Ta in thin films. A seed layer of Ta reactively sputtered in a nitrogen containing environment is grown on the substrate, and using this seed layer of Ta(N) layers of Alpha-Ta are then formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.