Power semiconductor device having gate structure in trench
US5282018A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 1993 |
| Grant date | Jan 25, 1994 |
| Priority date | — |
| Expiry date | Apr 29, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power MOS semiconductor device, such as a vertical MOSFET, IGBT, and IPD, includes a body of semiconductor material having a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type and formed in the first semiconductor layer to provide a channel, a third semiconductor layer having the first conductivity type and formed in the second semiconductor layer, a trench formed in the first semiconductor layer across the third and second semiconductor layers, a gate insulating film covering a surface of the trench and extending to a surface of the third semiconductor layer, a gate electrode layer provided on the gate insulating film, and a buried layer having the first conductivity type provided in the first semiconductor layer so as to be contiguous to a bottom of the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.