Method for preventing the exposure of borophosphosilicate glass to the ambient and stopping phosphorus ions from infiltrating silicon in a semiconductor process
US5284800A · kind A · utility
8Cited by
2References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 19, 1992 |
| Grant date | Feb 8, 1994 |
| Priority date | — |
| Expiry date | Feb 19, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/133
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An embodiment of the present invention is a semiconductor fabrication process that deposits an oxide layer after a step to make contact openings in a BPSG layer and before a contact reflow step. The oxide allows implant dopants to be properly activated in the contact reflow step without excessive reflow of the BPSG.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.