Heterojunction field effect transistor
US5285087A · kind A · utility
27Cited by
9References
1Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 21, 1991 |
| Grant date | Feb 8, 1994 |
| Priority date | — |
| Expiry date | Jun 21, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/4732
Abstract
A heterojunction field effect transistor includes a semi-insulating crystalline layer, a pseudomorphic channel layer disposed on the semi-insulating crystalline layer, and an electron supply layer disposed on said pseudomorphic layer. The channel layer has a lattice constant equal to or close to that of the semi-insulating crystalline layer adjacent to semi-insulating crystalline layer and different from the semi-insulating crystalline layer adjacent to the electron supply layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.