Wafer cleaning method and apparatus therefore
US5288333A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 29, 1992 |
| Grant date | Feb 22, 1994 |
| Priority date | — |
| Expiry date | Jul 29, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67023
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A wafer cleaning method and apparatus in which a cleaning solution is caused to evaporate at a temperature below its boiling point, and cleaning vapor thus produced is applied at a temperature above its dew point to a wafer such as a semiconductor wafer. The wafer is cleaned without formation of colloidal silica in the absence of aerosol, or etched uniformly free of impurities. The wafer cleaning apparatus comprises a cleaning solution storage, a vapor generating section, a wafer supporting position of a wafer supporting device and a vapor supply section. These components are arranged in a housing to overlap one another in plan view and to lie vertically close to one another. The apparatus has a compact overall construction with simplified seals for preventing leakage of the cleaning vapor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.