Method for making anti-fuse structures
US5290734A · kind A · utility
75Cited by
8References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 26, 1991 |
| Grant date | Mar 1, 1994 |
| Priority date | — |
| Expiry date | Jul 26, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/055
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An anti-fuse structure characterized by a substrate, an oxide layer formed over the substrate having an opening formed therein, an amorphous silicon material disposed within the opening and contacting the substrate, a conductive protective material, such as titanium tungsten, disposed over the amorphous silicon material, and oxide spacers lining the walls of a recess formed within the protective material. The protective material and the spacers provide tighter programming voltage distributions for the anti-fuse structure and help prevent anti-fuse failure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.