Masking material for applications in plasma etching
US5292402A · kind A · utility
3Cited by
3References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 9, 1992 |
| Grant date | Mar 8, 1994 |
| Priority date | — |
| Expiry date | Jul 9, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/106
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Materials of the lead perovskite family PbZr.sub.x Ti.sub.1-x O.sub.3 have been discovered to be excellent masking materials in the etching of silicon and silicon-containing materials with chlorine and fluorine -based plasmas. Generally, materials of the lead perovskite family are suitable masking materials for any material that is etched in chlorine and fluorine -based plasmas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.