SOT CMOS device having differentially doped body extension for providing improved backside leakage channel stop
US5293052A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 1992 |
| Grant date | Mar 8, 1994 |
| Priority date | — |
| Expiry date | Mar 23, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/85
Abstract
An SOI/SOS thin film MOS mesa architecture has its body/channel region extended beyond the source and drain regions and the impurity concentration is increased at an end portion of the extended body region, so as to provide a channel stop region that is effective to functionally interrupt a current leakage path or `parasitic` N-channel that may be induced along sidewall surface of the P-type material of the body/channel region. In addition, in order to inhibit radiation-induced leakage along a backside interface of the extended body region abutting an underlying dielectric substrate, a portion of the extended body region between the channel stop region and the body/channel region has an impurity concentration profile that is increased at the interface of the extended body region with the underlying dielectric substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.