William H. Speece
10Patents
8h-index
13Co-inventors
65Inventor score
Filing activity: Feb 7, 1992 → Mar 29, 2004
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5362667A | Bonded wafer processing | Emerging Cross-Sectional Technologies | 54 | Expired |
| USH1435H | SOI CMOS device having body extension for providing sidewall channel | General | 50 | Active |
| US6255195A | Method for forming a bonded substrate containing a planar intrinsic gettering zone and substrate formed by said method | Emerging Cross-Sectional Technologies | 40 | Expired |
| US5517047A | Bonded wafer processing | Emerging Cross-Sectional Technologies | 35 | Expired |
| US5728624A | Bonded wafer processing | Emerging Cross-Sectional Technologies | 28 | Expired |
| US5298434A | Selective recrystallization to reduce P-channel transistor leakage in silicon-on-sapphire CMOS radiation hardened integrated circuits | Emerging Cross-Sectional Technologies | 15 | Expired |
| US5293052A | SOT CMOS device having differentially doped body extension for providing improved backside leakage channel stop | Electricity | 14 | Expired |
| US5391903A | Selective recrystallization to reduce P-channel transistor leakage in silicon-on-sapphire CMOS radiation hardened integrated circuits | Emerging Cross-Sectional Technologies | 13 | Expired |
| US6825532B2 | Bonded substrate for an integrated circuit containing a planar intrinsic gettering zone | Emerging Cross-Sectional Technologies | 8 | Expired |
| US7052973B2 | Bonded substrate for an integrated circuit containing a planar intrinsic gettering zone | Emerging Cross-Sectional Technologies | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.