Semiconductor device with high off-breakdown-voltage and low on resistance
US5293056A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 6, 1992 |
| Grant date | Mar 8, 1994 |
| Priority date | — |
| Expiry date | Apr 6, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes an N.sup.- type semiconductor layer (2). The N.sup.- type semiconductor layer (2) includes a triangular pole trench (10), an apex portion thereof contains a gate electrode (5). The trench (10) penetrates the semiconductor layer (2) and a P type well region (3) and projects into an N.sup.+ type source region (4). A source electrode (7) is disposed so as to be insulated from the semiconductor layer (2) by an oxide film (9) and in contact with the well region (3) and the source region (4). A drain electrode (8) is connected to the semiconductor layer (2) through an N.sup.+ type semiconductor substrate (1). With a higher potential at the gate electrode (5) than at the source electrode (7), the well region (3) is partially inverted into N type near the trench (10). Thus, the semiconductor device is turned on due to a channel created associated to the conductivity type inversion. Most of current flow allowed in the semiconductor layer (2) by the channel flows near the trench (10). Hence, even when process patterns are refined, electrode-to-electrode insulation remains undegraded in the semiconductor device, attaining low on-resistance and high off-breakdow…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.