Tomohide Terashima
88Patents
15h-index
21Co-inventors
84Inventor score
Filing activity: Aug 1, 1989 → Nov 4, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5541430A | VDMOS semiconductor device | Electricity | 33 | Expired |
| US5889310A | Semiconductor device with high breakdown voltage island region | Electricity | 32 | Expired |
| US5894156A | Semiconductor device having a high breakdown voltage isolation region | Emerging Cross-Sectional Technologies | 27 | Expired |
| US6642599B1 | Semiconductor device and method of manufacturing the same | Electricity | 25 | Expired |
| US5204545A | Structure for preventing field concentration in semiconductor device and method of forming the same | Electricity | 25 | Expired |
| US5731628A | Semiconductor device having element with high breakdown voltage | Electricity | 25 | Expired |
| US5164804A | Semiconductor device having high breakdown voltage and low resistance and method of fabricating the same | Emerging Cross-Sectional Technologies | 23 | Expired |
| US6515349B2 | Semiconductor device and process for the same | Electricity | 21 | Expired |
| US6359318B1 | Semiconductor device with DMOS and bi-polar transistors | Electricity | 19 | Expired |
| US6376891B1 | High voltage breakdown isolation semiconductor device and manufacturing process for making the device | Electricity | 19 | Expired |
| US5155569A | Thyristor device with improved turn-off characteristics | Electricity | 17 | Expired |
| US6586780B1 | Semiconductor device for supplying output voltage according to high power supply voltage | Electricity | 16 | Expired |
| US5495124A | Semiconductor device with increased breakdown voltage | Electricity | 16 | Expired |
| US5485030A | Dielectric element isolated semiconductor device and a method of manufacturing the same | Emerging Cross-Sectional Technologies | 16 | Expired |
| US5334546A | Method of forming a semiconductor device which prevents field concentration | Electricity | 16 | Expired |
| US5428241A | High breakdown voltage type semiconductor device | Electricity | 15 | Expired |
| US5372954A | Method of fabricating an insulated gate bipolar transistor | Emerging Cross-Sectional Technologies | 15 | Expired |
| US5091766A | Thyristor with first and second independent control electrodes | Electricity | 13 | Expired |
| US5455439A | Semiconductor device which moderates electric field concentration caused by a conductive film formed on a surface thereof | Electricity | 13 | Expired |
| US5360746A | Method of fabricating a semiconductor device | Emerging Cross-Sectional Technologies | 13 | Expired |
| US6191466A | Semiconductor device containing a diode | Electricity | 11 | Expired |
| US5289019A | Insulated gate bipolar transistor | Emerging Cross-Sectional Technologies | 11 | Expired |
| US5194394A | Thyristor and method of manufacturing the same | Emerging Cross-Sectional Technologies | 10 | Expired |
| US5561077A | Dielectric element isolated semiconductor device and a method of manufacturing the same | Emerging Cross-Sectional Technologies | 10 | Expired |
| US5293056A | Semiconductor device with high off-breakdown-voltage and low on resistance | Emerging Cross-Sectional Technologies | 9 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.