Ohmic contact to p-type ZnSe
US5293074A · kind A · utility
4Cited by
3References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 5, 1992 |
| Grant date | Mar 8, 1994 |
| Priority date | — |
| Expiry date | May 5, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/823
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure with a p-type ZnSe layer has an improved ohmic contact consisting of a layer of Hg.sub.x Zn.sub.1-x Te.sub.a Se.sub.b Sc where x=0-1 with x being 0 at the surface of the ZnSe layer and increasing thereafter, a, b and c each =0-1 and a+b+c=1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.