Method for manufacturing a contact hole of a semiconductor device
US5294296A · kind A · utility
16Cited by
6References
1Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 11, 1993 |
| Grant date | Mar 15, 1994 |
| Priority date | — |
| Expiry date | Feb 11, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76804
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In the formation of a contact hole within highly limited area, the size of the contact hole does not vary. For achieving such purpose, after a first polysilicon pattern is formed, a concave portion is formed by isotropically etching the predetermined depth of an insulating layer. A second polysilicon spacer is then formed at the sidewall of the first polysilicon pattern and the concave portion. Using the etching process employing the first polysilicon pattern and the second polysilicon spacer as a mask, the contact hole is formed by etching the insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.