Barrier improvement in thin films
US5294486A · kind A · utility
7Cited by
22References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 29, 1993 |
| Grant date | Mar 15, 1994 |
| Priority date | — |
| Expiry date | Mar 29, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1291
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An improved thin film barrier with three layers where an interlayer is between barrier layers on each side, the interlayer serving as an atom energy sink. The improved barrier in the diffusion of Cu through Ni into Au where the barrier layers are Ni and the interlayer is Au, making a stack of AuNiAuNiCu, reduces the Cu present in the external Au layer after prolonged annealing in the vicinity of 0.2% atomic.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.