Method of selective etching native oxide
US5294568A · kind A · utility
78Cited by
5References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 10, 1992 |
| Grant date | Mar 15, 1994 |
| Priority date | — |
| Expiry date | Apr 10, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/974
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of selective etching of native oxide on a substrate is disclosed in which hydrogen halide vapor and water vapor are exposed to the substrate surface under appropriate conditions and long enough to remove native oxide but not long enough to remove any significant amount of other oxides. Treating conditions are maintained to prevent water vapor from condensing on the substrate until sufficient native oxide is etched so that substantially all the native oxide will be etched before appreciable other oxides are etched.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.