Thin film semiconductor device having inverted stagger structure, and device having such semiconductor device
US5294811A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 2, 1991 |
| Grant date | Mar 15, 1994 |
| Priority date | — |
| Expiry date | Dec 2, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6746
Abstract
TFTs with an inverted stagger structure are fabricated according to the invention as follows; a glass substrate after depositing amorphous silicon (a-Si) thereupon is transferred to a laser annealing chamber which is kept in non-oxidation ambient and provided with a sample holder and a substrate heating mechanism. The substrate is fixed on the sample holder, then subjected to laser annealing while being heated from the glass substrate side, thereby growing polycrystalline silicon having substantially improved crystallinity, on which a-Si is further deposited. According to this process of the invention, it is capable of forming TFTs having a higher mobility and a smaller leakage current in the periphery of the substrate, with addition of almost no changes to the process and device structures of conventional TFTs which constitute pixels, and even more the peripheral drive circuitry is capable of being integrated in the display substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.