Surface emission type semiconductor laser
US5295148A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 2, 1993 |
| Grant date | Mar 15, 1994 |
| Priority date | — |
| Expiry date | Feb 2, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/166
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A surface emission type semiconductor laser includes a plurality of semiconductor layers defining at least one resonator in a direction perpendicular to the semiconductor substrate of the laser, the layers including at least a cladding layer in the semiconductor layers being formed into at least one column-like portion extending in a direction perpendicular to the semiconductor substrate, and a II-VI group compound semiconductor epitaxial layer buried around the column-like portion. The column-like portion is of rectangular cross-section in a plane parallel to the semiconductor substrate and having longer and shorter sides, whereby the polarization plane of said emitted laser beam is parallel to the direction of said shorter sides.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.