Compound semiconductor crystal growing method
US5296088A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 4, 1992 |
| Grant date | Mar 22, 1994 |
| Priority date | — |
| Expiry date | Aug 4, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/057
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A compound semiconductor crystal growing method includes the steps of (a) setting a substrate having a substrate surface in a reaction chamber, and (b) supplying a material gas of a compound semiconductor which is to be grown in the form of a crystal on the substrate surface within the reaction chamber and a control gas to the reaction chamber under a predetermined condition, and controlling the supply of the control gas to control an adsorption rate of the material gas on the substrate surface. The control gas makes competitive adsorption with the material gas on the substrate surface but makes no chemical reaction such that no continual accumulation on the substrate surface occurs under the predetermined condition. The competitive adsorption is defined as a phenomenon in which the material gas and the control gas compete and become adsorped on the substrate surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.