Method of providing lower contact resistance in MOS transistor structures
US5296386A · kind A · utility
31Cited by
6References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 6, 1991 |
| Grant date | Mar 22, 1994 |
| Priority date | — |
| Expiry date | Mar 6, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/082
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Germanium is used to significantly enhance the drift mobilities of minority carriers in the channels of N-channel and P-channel metal-oxide-semiconductor (MOS) transistors with silicon substrates. Germanium processing is also used to enhance the source/drain contact conductance for MOS devices. Methods are disclosed for forming the germanium-rich interfacial layer utilizing a germanium implant and wet oxidation or growing a silicon-germanium alloy by molecular beam epitaxy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.