Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom
US5296716A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 19, 1991 |
| Grant date | Mar 22, 1994 |
| Priority date | — |
| Expiry date | Aug 19, 2011 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/04
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A solid state, directly overwritable, electronic, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, multibit single cell memory based upon phenomenologically novel electrical switching characteristics provided by a unique class of semiconductor materials in unique configurations, which memory exhibits orders of magnitude higher switching speeds at remarkably reduced energy levels. The novel memory of the instant invention is characterized, inter alia, by numerous stable and truly non-volatile detectable configurations of local atomic and/or electronic order, which can be selectively and repeatably accessed by electrical input signals of varying pulse voltage and duration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.