Application of electronic properties of germanium to inhibit n-type or p-type diffusion in silicon
US5298435A · kind A · utility
18Cited by
6References
15Claims
0Family size
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Key dates
| Filing date | Sep 3, 1992 |
| Grant date | Mar 29, 1994 |
| Priority date | — |
| Expiry date | Sep 3, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/965
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of inhibiting dopant diffusion in silicon using germanium is provided. Germanium is distributed in substitutional sites in a silicon lattice to form two regions of germanium interposed between a region where dopant is to be introduced and a region from which dopant is to be excluded, the two germanium regions acting as a dopant diffusion barrier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.