Method of manufacturing semiconductor device terminal having a gold bump electrode
US5298459A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 5, 1991 |
| Grant date | Mar 29, 1994 |
| Priority date | — |
| Expiry date | Mar 5, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/131
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device provided with an external connection terminal composed of a metal bump electrode. A first metal film is formed on the entire surface of the semiconductor device, a second metal film on the first metal film, and a third metal film on the second metal film. A resist film is selectively formed on the third metal film. A metal bump electrode is formed on the third metal film, at a portion at which the resist film is not present by electrolytic plating while using the third metal film as a conductive plating electrode and the resist film as a mask. The resist film is removed and the metal films are etched while using the metal bump electrode as a mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.