Porous silicon carbide (SiC) semiconductor device
US5298767A · kind A · utility
31Cited by
7References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 6, 1992 |
| Grant date | Mar 29, 1994 |
| Priority date | — |
| Expiry date | Oct 6, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/96
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device employs at least one layer of semiconducting porous silicon carbide (SiC). The porous SiC layer has a monocrystalline structure wherein the pore sizes, shapes, and spacing are determined by the processing conditions. In one embodiment, the semiconductor device is a p-n junction diode in which a layer of n-type SiC is positioned on a p-type layer of SiC, with the p-type layer positioned on a layer of silicon dioxide. Because of the UV luminescent properties of the semiconducting porous SiC layer, it may also be utilized for other devices such as LEDs and optoelectronic devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.