Process for depositing titanium nitride film by CVD
US5300321A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 4, 1993 |
| Grant date | Apr 5, 1994 |
| Priority date | — |
| Expiry date | May 4, 2013 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/34
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process which is capable of depositing a titanium nitride film of a high quality at a high deposition rate by low temperature chemical vapor deposition is provided. The titanium nitride film is deposited using a gas source comprising a compound of the general formula: EQU A.sub.n B.sub.m Ti wherein n and m are independently selected from integers of from 1 to 3 provided that sum of n and m is equal to or smaller than 4; A is selected from a cyclic hydrocarbon group and a nitrogen-containing heterocyclic group which is bonded to the titanium by .pi. electron; and B is an alkylamine derivative group containing a nitrogen atom which is directly bonded to the titanium. The film deposition process of the invention is highly useful in LSI fabrication.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.