High voltage thin film transistor having a linear doping profile and method for making
US5300448A · kind A · utility
42Cited by
4References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 8, 1993 |
| Grant date | Apr 5, 1994 |
| Priority date | — |
| Expiry date | Feb 8, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
The present invention is directed to a method and thin film transistor having a linear doping profile between the gate and drain regions. This is constructed in a particular manner in order to achieve a thin film transistor having a significantly high breakdown voltage of the order of 700 to 900 volts, much greater than that achieved in the prior art.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.