Hetero crystalline structure and semiconductor device using it
US5300793A · kind A · utility
8Cited by
7References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 19, 1993 |
| Grant date | Apr 5, 1994 |
| Priority date | — |
| Expiry date | May 19, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S3/1628
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A hetero crystalline structure consisting of semiconductor materials of a zincblende-structure and wurtzite-structure. For example, formed on a semiconductor substrate having a crystal face of (100) of the zincblende structure is a semiconductor material of the wurtzite-structure in its bulk state as a film of the same zincblende-structure as the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.