GaAs FET with resistive AlGaAs

US5300795A · kind A · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Paul Saunier · Garland, US
• Hua Q. Tserng · Dallas, US

Key dates

• Filing date: Mar 20, 1992
• Grant date: Apr 5, 1994
• Expiry date: Mar 20, 2012

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/877

Abstract

This is a FET device and the device comprises: a buffer layer 30; a channel layer 32 of doped narrow bandgap material over the buffer layer; and a resistive layer 34 of low doped wide bandgap material over the channel layer, the doping of the channel layer and the resistive layer being such that no significant transfer of electrons occurs between the resistive layer and the channel layer. This is also a method of making a FET device.