Light emitting diode having an improved GaP compound substrate for an epitaxial growth layer thereon
US5302839A · kind A · utility
7Cited by
1References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 27, 1992 |
| Grant date | Apr 12, 1994 |
| Priority date | — |
| Expiry date | Jul 27, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/013
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A compound semiconductor single crystal which has an Si concentration of not more than 1.times.10.sup.17 atoms/cm.sup.3 and/or an O concentration of not more than 7.times.10.sup.16 atoms/cm.sup.3 is particularly suitable for use as substrate for epitaxial deposition of a high luminance light-emitting device which emits green light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.