Pressure transducer utilizing diamond piezoresistive sensors and silicon carbide force collector
US5303594A · kind A · utility
29Cited by
5References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 11, 1992 |
| Grant date | Apr 19, 1994 |
| Priority date | — |
| Expiry date | Aug 11, 2012 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L9/0055
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A pressure transducer employing at least one piezoresistive sensor fabricated from diamond. The diamond piezoresistive sensors are formed on a dielectric layer fabricated from silicon dioxide. The dielectric layer is formed on a silicon carbide force collector. In addition, the silicon carbide force collector may be fabricated from .alpha.-silicon carbide or p-type silicon carbide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.